IRFR120Z International Rectifier, IRFR120Z Datasheet - Page 3

• Manufacturer Part Number: IRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR120Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR120Z

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100.0
Fig 3. Typical Transfer Characteristics
0.01
10.0
Fig 1. Typical Output Characteristics
100
0.1
1.0
0.1
10
1
0.1
4.0
0
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
T J = 25°C
1
1
4.5V
6.0
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
10
10
7.0
100
100
8.0
100
Fig 4. Typical Forward Transconductance
0.1
Fig 2. Typical Output Characteristics
10
12
10
1
8
6
4
2
0
0.1
0
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
2
1
1
V DS = 10V
380µs PULSE WIDTH
4.5V
60µs PULSE WIDTH
Tj = 175°C
4
T J = 25°C
10
T J = 175°C
10
6
100
100
3
8