IRFR120Z International Rectifier, IRFR120Z Datasheet - Page 5

• Manufacturer Part Number: IRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR120Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR120Z

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0.01
0.1
10
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
6
4
2
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
Case Temperature
0.10
0.05
0.02
0.01
50
T J , Junction Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
100
1E-005
125
t 1 , Rectangular Pulse Duration (sec)
150
175
0.0001
τ
J
τ
J
τ
3.0
2.5
2.0
1.5
1.0
0.5
1
Ci= τi/Ri
τ
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i/Ri
R
I D = 5.2A
V GS = 10V
1
R
1
τ
2
T J , Junction Temperature (°C)
τ
R
2
Vs. Temperature
2
R
2
20 40 60 80 100 120 140 160 180
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
3
0.001
3
τ
C
τ
Ri (°C/W)
0.33747 0.000053
1.793
2.150
0.000125
0.000474
τi (sec)
5
0.01