IRFZ48Z International Rectifier, IRFZ48Z Datasheet - Page 2
![MOSFET N-CH 55V 61A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFZ48Z
Manufacturer Part Number
IRFZ48Z
Description
MOSFET N-CH 55V 61A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFZ48Z.pdf
(13 pages)
Specifications of IRFZ48Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Power - Max
91W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ48Z
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Company
Part Number
Manufacturer
Quantity
Price
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Static @ T
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
2
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11).
R
recommended for use above this value.
T
Limited by T
SD
J
G
DSS
eff.
≤ 175°C.
= 25Ω, I
≤ 37A, di/dt ≤ 920A/µs, V
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 37A, V
= 25°C (unless otherwise specified)
, starting T
Parameter
GS
Parameter
=10V. Part not
Ã
J
DD
= 25°C, L =0.11mH,
≤ V
(BR)DSS
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
24
C
as C
Limited by T
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
oss
oss
eff. is a fixed capacitance that gives the same charging time
0.054
1720
1020
–––
–––
–––
–––
–––
–––
–––
300
160
230
380
–––
–––
–––
8.6
4.5
7.5
43
11
16
15
69
35
39
20
13
while V
Jmax
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
4.0
1.3
11
20
64
16
24
61
31
20
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
is rising from 0 to 80% V
2
Pak, when mounted on 1" square PCB
V/°C
mΩ
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 37A
= 37A
= 25°C, I
= 25°C, I
= 12Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
f
f
D
Conditions
Conditions
D
S
F
DS
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 37A, V
= 37A, V
= 37A
= 37A
= 0V to 44V
DSS
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
.
D
f
= 1mA
GS
DD
J
G
= 125°C
= 30V
G
= 0V
f
S
D
D
S