IRFZ48Z International Rectifier, IRFZ48Z Datasheet - Page 4
![MOSFET N-CH 55V 61A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFZ48Z
Manufacturer Part Number
IRFZ48Z
Description
MOSFET N-CH 55V 61A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFZ48Z.pdf
(13 pages)
Specifications of IRFZ48Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Power - Max
91W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ48Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ48ZL
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFZ48ZLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ48ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ48ZS
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ48ZS
Manufacturer:
IR
Quantity:
12 500
4
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100
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1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 25°C
C oss
C rss
C iss
f = 1 MHZ
10
V GS = 0V
100
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
I D = 37A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 44V
V DS = 28V
V DS = 11V
20
10
100µsec
10msec
1msec
30
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100
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