IRF450 International Rectifier, IRF450 Datasheet

IRF450

Manufacturer Part Number

IRF450

Description

MOSFET N-CH 500V 12A TO-3-3

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF450.pdf (7 pages)

2.IRF450.pdf (3 pages)

Specifications of IRF450

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

500 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

120nC @ 10V

Input Capacitance (ciss) @ Vds

2700pF @ 25V

Power - Max

150W

Mounting Type

Through Hole

Package / Case

TO-204, TO-3

Current, Drain

12 A

Gate Charge, Total

55 nC

Package Type

TO-3

Polarization

N-Channel

Power Dissipation

150 W

Resistance, Drain To Source On

0.4 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

170 ns

Time, Turn-on Delay

35 ns

Transconductance, Forward

5.5 S

Voltage, Breakdown, Drain To Source

500 V

Voltage, Forward, Diode

1.7 V

Voltage, Gate To Source

±20 V

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF450
Q2009037

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF450

Manufacturer:

Quantity:

3 540

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF450

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF450E

Manufacturer:

INTERSIL

Quantity:

348

Current page: 1 of 3
Download datasheet (827Kb)

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

THRU-HOLE (TO-204AA/AE)

Product Summary

The HEXFET

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state

resistance combined with high transconductance;

superior reverse energy and diode recovery dv/dt

capability.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

I D @ V GS = 0V, T C = 100°C

I D @ V GS =0V, T C = 25°C

Part Number BVDSS R

IRF450

P D @ T C = 25°C

T STG

dv/dt

E AR

E AS

I DM

V GS

I AR

T J

TRANSISTORS

technology is the key to International

500V

0.400Ω 12A

DS(on)

Parameter

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

11.5 (typical)

-55 to 150

500V, N-CHANNEL

7.75

150

±20

750

1.2

3.5

JANTXV2N6770

TO-3

JANTX2N6770

IRF450

PD-90330G

Units

W/°C

V/ns

° C

Related parts for IRF450

IRF450 Summary of contents

Page 1

... Storage Temperature Range Lead Temperature Weight I D Features: Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n 300 (0.063 in. (1.6mm) from case for 10s) PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL TO-3 Units 12 A 7.75 48 150 W 1.2 W/°C ±20 V 750 mJ ...

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