IRF450 International Rectifier, IRF450 Datasheet

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IRF450

Manufacturer Part Number
IRF450
Description
MOSFET N-CH 500V 12A TO-3-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF450

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-204, TO-3
Current, Drain
12 A
Gate Charge, Total
55 nC
Package Type
TO-3
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.4 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
170 ns
Time, Turn-on Delay
35 ns
Transconductance, Forward
5.5 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.7 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF450
Q2009037

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF450
Manufacturer:
IR
Quantity:
3 540
Part Number:
IRF450
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF450E
Manufacturer:
INTERSIL
Quantity:
348
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 0V, T C = 100°C
I D @ V GS =0V, T C = 25°C
www.irf.com
Part Number
IRF450
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS
500V
R
0.400
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
I
D
A
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5(typical)
-55 to 150
500V, N-CHANNEL
7.75
150
±20
1.2
8.0
3.5
1 2
4 8
1 2
-
JANTXV2N6770
TO-3
JANTX2N6770
IRF450
PD - 90330F
Units
W/°C
V/ns
o
01/22/01
mJ
mJ
W
A
A
V
g
C
1

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IRF450 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL TO-3 Units 7. 150 W 1.2 W/°C ±20 V 8.0 mJ ...

Page 2

... IRF450 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF450 3 ...

Page 4

... IRF450 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& a& b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 10b. Switching Time Waveforms IRF450 ...

Page 6

... IRF450 10V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 10V Charge Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit Vs. Drain Current Current Regulator Same Type as D.U.T. ...

Page 7

... IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 01/01 12, di/dt 130A/ s, 500V 150°C 300 s; Duty Cycle 2% IRF450 7 ...

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