STW13NK80Z STMicroelectronics, STW13NK80Z Datasheet - Page 3

• Manufacturer Part Number: STW13NK80Z
• Description: MOSFET N-CH 800V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW13NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STW13NK80Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2.
Table 2.
Table 3.
Table 4.
Symbol
Symbol
Rthj-case
Rthj-amb
BV
Symbol
I
E
E
SD
I
I
AR
GSO
DM
AS
V
V
T
T
P
AS
I
I
T
DS
GS
stg
J
≤ 12A, di/dt ≤ 200A/µs, V
D
D
tot
j
(1)
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Gate-source breakdown
voltage
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source zener diode
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
Parameter
j
= 25 °C, I
DD
≤ V
(BR)DSS
Parameter
D
Parameter
= I
C
j
max)
AR
, T
= 25°C
GS
Igs=± 1mA (open drain)
, V
j
≤ T
= 0)
DD
JMAX.
Test conditions
= 50 V)
C
C
= 25°C
= 100°C
-55 to 150
Min.
30
Value
± 30
1.85
800
230
7.6
4.5
12
48
Max value
Typ.
450
12
Electrical ratings
0.54
300
50
Max.
W/°C
Unit
mJ
°C
W
V
A
A
V
A
°C/W
°C/W
Unit
Unit
mJ
°C
A
V
3/14