STW13NK80Z STMicroelectronics, STW13NK80Z Datasheet - Page 4
STW13NK80Z
Manufacturer Part Number
STW13NK80Z
Description
MOSFET N-CH 800V 12A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STW13NK80Z.pdf
(14 pages)
Specifications of STW13NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
3480pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW13NK80Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STW13NK80Z
Manufacturer:
ST
Quantity:
20 000
Electrical ratings
1.1
4/14
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
STW13NK80Z