STB21NM60N-1 STMicroelectronics, STB21NM60N-1 Datasheet - Page 5

• Manufacturer Part Number: STB21NM60N-1
• Description: MOSFET N-CH 600V 17A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5728

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt=100 A/µs
(see Figure 20)
I
di/dt=100 A/µs,
T
(see Figure 20)
SD
SD
SD
j
= 150 °C
= 17 A, V
Test conditions
= 17 A, V
= 17 A,V
DD
DD
GS
= 100 V
= 100 V
= 0
Electrical characteristics
Min.
Typ.
372
486
4.6
6.3
25
26
Max.
1.5
17
68
Unit
µC
µC
ns
ns
A
A
V
A
A
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