STB21NM60N-1 STMicroelectronics, STB21NM60N-1 Datasheet - Page 8
![MOSFET N-CH 600V 17A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB21NM60N-1
Manufacturer Part Number
STB21NM60N-1
Description
MOSFET N-CH 600V 17A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM60N.pdf
(18 pages)
Specifications of STB21NM60N-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 50V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5728
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM60N-1
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 15. Normalized on resistance vs
Figure 17. Normalized BV
temperature
Dss
vs temperature