2SK2614 Toshiba, 2SK2614 Datasheet - Page 3
![MOSFET N-CH 50V 20A 2-7B1B](/photos/5/62/56212/2sk2614_sml.jpg)
2SK2614
Manufacturer Part Number
2SK2614
Description
MOSFET N-CH 50V 20A 2-7B1B
Manufacturer
Toshiba
Datasheet
1.2SK2614TE16L1Q.pdf
(6 pages)
Specifications of 2SK2614
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
2-7B1B
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
100
20
16
12
50
40
30
20
10
50
30
10
8
4
0
0
5
3
1
0
0
1
Common source
Common source
Tc = 25°C
Pulse test
V
Pulse test
Common source
V DS = 10 V
Pulse test
DS
= 10 V
Drain-source voltage V DS
0.2
Gate-source voltage V GS
2
Tc = −55°C
3
Drain current I D (A)
5
0.4
4
I
I
|Y
15
D
D
10
fs
– V
– V
10
| – I
8
100
Tc = −55°C
DS
GS
D
0.6
6
25
30
100
(V)
(V)
25
V GS = 3 V
0.8
6
8
50
5
3.5
4
100
1.0
10
3
0.05
0.03
0.01
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
50
40
30
20
10
0
0
1
0
0
1
Common source
Tc = 25°C
Pulse test
10
15
Drain-source voltage V DS
Gate-source voltage V GS
2
4
3
8
Drain current I D (A)
5
6
R
V
DS (ON)
4
8
V GS = 4 V
I
DS
D
5
– V
10
– V
DS
4.5
GS
– I
12
6
D
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
4
30
V GS = 3 V
3.5
(V)
(V)
10
16
8
I D = 25 A
50
12
2009-12-21
6
2SK2614
100
10
20