2SK1359 Toshiba, 2SK1359 Datasheet - Page 2

• Manufacturer Part Number: 2SK1359
• Description: MOSFET N-CH 1KV 5A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK1359

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
K1359
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 2
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
C
I
I
|Y
C
C
Q
Q
GSS
DRP
DSS
V
I
t
t
Q
DSF
DR
on
off
oss
t
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
I
D
DR
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
Note 2: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
= 4 A, V
= 800 V, V
= 10 V, I
= 20 V, I
= 25 V, V
≈ 400 V, V
= ±25 V, V
= 10 V, I
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
GS
2
D
D
D
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 2 A
GS
DS
GS
= 2 A
= 0 V
= 0 V
= 0V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
—
—
D
= 4 A
1000
Min
Min
1.5
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
700
100
3.0
2.0
55
18
30
12
70
60
35
25
—
—
—
—
—
—
—
2009-09-29
2SK1359
Max
−1.9
Max
±50
300
3.5
3.8
15
—
—
—
—
—
—
—
—
—
—
—
—
5
Unit
Unit
nA
μA
nC
pF
ns
V
V
Ω
S
A
A
V