2SK2607 Toshiba, 2SK2607 Datasheet - Page 3

• Manufacturer Part Number: 2SK2607
• Description: MOSFET N-CH 800V 9A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2607

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2160pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2SK2607
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2009-09-29