2SK2615(TE12L) Toshiba, 2SK2615(TE12L) Datasheet - Page 5

• Manufacturer Part Number: 2SK2615(TE12L)
• Description: MOSFET N-CH 60V 2A PW-MINI
• Manufacturer: Toshiba

Specifications of 2SK2615(TE12L)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 150pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: PW-MINI
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2SK2615
5
2009-09-29