TPCF8103(TE85L) Toshiba, TPCF8103(TE85L) Datasheet - Page 2

• Manufacturer Part Number: TPCF8103(TE85L)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8103(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8103TR

Thermal Characteristics
Marking (Note 5)
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
(or abbreviation code)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: Black round marking “●” locates on the left lower side of parts number “F3C” indicates terminal No.1.
DD
Part No.
= -16 V, T
Pin #1
Characteristics
Lot code (month)
(a)
ch
F3C
Lot code
(year)
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No. (weekly code)
FR-4
(Unit: mm)
Product-specific code
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
178.6
Max
50.0
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= -1.35 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCF8103
2006-11-16