TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPCF8104(TE85L)
• Description: MOSFET P-CH 30V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8104(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8104TR

10000
1000
100
2.5
1.5
0.5
50
40
30
20
10
10
−80
1
-0.1
3
2
1
0
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
Common source
Pulse test
V GS = -4.5 V
−40
Drain-source voltage V DS (V)
V GS = -10 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
-1
0
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
80
40
– Ta
– Ta
-3A
-3A
I D = -6A
-10
80
DS
I D =− 6A
120
-1.5A
C oss
C iss
C rss
120
-1.5A
-100
160
160
5
-100
-40
-10
-10
-20
-30
-1
-4
-3
-2
-1
−80
0
0
0
0
Common source
Ta = 25°C
Pulse test
-10
V DS
−40
-3
0.4
-10
-2
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
-1
Total gate charge Q g (nC)
Dynamic input/output
0
characteristics
-20
0.8
I
DR
V
V GS
V GS = 0 V
th
-6
– V
-4.5
40
– Ta
DS
1.2
-30
80
Common source
I D = -6 A
Ta = 25°C
Pulse test
-12
Common source
V DS = -10 V
I D = -1 mA
Pulse test
V DD = -24 V
TPCF8104
-40
1.6
120
2006-11-16
160
-50
2
-16
-12
-8
-4
0