HAT2167H Renesas Electronics America, HAT2167H Datasheet - Page 6

• Manufacturer Part Number: HAT2167H
• Description: MOSFET N-CH 30V 40A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2167H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2700pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

HAT2167H
Rev.5.00 Sep 20, 2005 page 4 of 7
100
Static Drain to Source on State Resistance
20
10
50
10
50
40
30
20
10
0
8
6
4
2
0
0.1
-25
0
Pulse Test
V
V
I
Reverse Drain Current
10 V
D
DS
GS
Case Temperature
Dynamic Input Characteristics
= 30 A
V
0.3
0
Body-Drain Diode Reverse
= 4.5 V
DD
Gate Charge
20
= 25 V
25
10 V
vs. Temperature
Recovery Time
5 V
1
V
40
50
DD
di/dt = 100 A/µs
V
3
= 25 V
GS
10 V
75
10 A, 20 A, 50 A
5 V
60
I
= 0, Ta = 25°C
D
Qg (nc)
10
= 50 A
100 125 150
Tc
10 A, 20 A
I
V
80
DR
30
GS
(°C)
(A)
100
100
20
16
12
8
4
0
10000
3000
1000
1000
100
300
100
300
100
0.3
0.1
30
10
30
10
10
30
3
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
0.3
0.3
= 0
Switching Characteristics
5
Tc = -25°C
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
Drain Current I
1
1
V
Rg = 4.7 Ω, duty ≤ 1 %
Drain Current
10
GS
t d(off)
= 10 V, V
3
3
15
25°C
10
10
I
V
Pulse Test
D
D
DS
DS
20
(A)
= 10 V
(A)
t d(on)
= 10 V
30
30
DS
75°C
Coss
Crss
Ciss
25
t r
(V)
t f
100
100
30