HAT2168H Renesas Electronics America, HAT2168H Datasheet - Page 7

• Manufacturer Part Number: HAT2168H
• Description: MOSFET N-CH 30V 30A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2168H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1730pF @ 10V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2168H
Rev.7.00 Sep 20, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Avalanche Test Circuit
10 V
0.03
0.01
5 V
V
Monitor
50
0.3
0.1
DS
3
1
10
0.8
Rg
0.5
D = 1
V
GS
1.2
= 0
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Test
100
D. U. T
I
Monitor
V
AP
1.6
SD
L
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
25
20
15
10
DD
5
0
P
25
DM
ch - c(t) = s (t)
ch - c = 8.33 C/ W, Tc = 25 C
Channel Temperature Tch ( C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
50
AP
=
Avalanche Waveform
1
2
PW
T
I
D
L I
75
AP
1
ch - c
2
100
Tc = 25 C
D =
V
I
V
duty < 0.1 %
Rg
AP
DSS
DD
V
PW
= 15 A
T
DSS
125
= 15 V
– V
50
10
DD
V
DS
150
V
(BR)DSS