BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 6

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
= V
2 x I
8.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
A
A
DS
0
0
D
)
P
x R
tot
p
1
p
5
= 80 µs
= 100W
= 80 µs , T
DS(on)max
2
10
3
15
l
4
20
j
k
= 25 °C
j
D
5
25
= f (V
i
6
30
h
GS
7
)
35
8
g
e
c
a
f
d
b
V
V GS [V]
V
DS
a
b
c
d
e
f
g
h
i
j
k 10.0
l 20.0
GS
V
V
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
45
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS
fs
DS (on)
2 x I
3.0
2.0
1.5
1.0
0.5
0.0
10
S
8
7
6
5
4
3
2
1
0
0.0
0.0
= I
D
V
V
GS
GS
4.0
4.5
a
a
x R
p
p
0.5
[V] =
[V] =
1.0
D
= 80 µs,
5.0
b
= 80 µs, T
)
a
DS(on)max
5.5
c
1.0
2.0
b
6.0
d
1.5
3.0
6.5
e
c
j
= 25 °C
7.0
2.0
f
4.0
7.5
g
fs
2.5
d
= f
5.0
8.0
h
( I
9.0
3.0
i
D
e
BUZ 80 A
6.0
)
09/96
10.0
j
I
D
I
f
D
A
A
20.0
k
k
g
i
j
7.5
h
4.0