SPW47N60C2 Infineon Technologies, SPW47N60C2 Datasheet - Page 5

• Manufacturer Part Number: SPW47N60C2
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60C2IN

1 Power dissipation
P
3 Transient thermal impedance
Z
parameter: D = t
thJC
tot
K/W
10
10
10
10
= f (T
10
10
500
400
350
300
250
200
150
100
W
50
= f (t
-1
-2
-3
-4
0
1
0
10
0
SPW47N60C2
-7
C
p
20
)
10
)
-6
40
10
p
/T
-5
60
10
-4
80
10
100
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
120
-2
°C
T
t
s
C
p
Final data
160
10
Page 5
0
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f (V
10
10
10
10
10
220
180
160
140
120
100
A
A
80
60
40
20
-1
-2
0
2
1
0
10
0
DS
DS
0
); T
)
p
5
= 10 µs, V
j
=25°C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10
C
20V
15V
12V
=25°C
GS
SPW47N60C2
15
10
2002-08-12
2
V
V
11V
10V
8V
9V
7V
V
V
DS
DS
10
25
3