BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet - Page 3

• Manufacturer Part Number: BSS192E6327
• Description: MOSFET P-CH 240V 150MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 130pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BSS192; BSS192INTR

Electrical Characteristics, at T
Semiconductor Group
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= 50
= -30 V, V
= 50
= -30 V, V
= 50
= -30 V, V
= 50
2
*
I
D *
DS
DS
DS
R
DS(on)max,
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -10 V, I
= -10 V, I
= -10 V, I
= -10 V, I
I
D
= -0.15 A
D
D
D
D
= -0.25 A
= -0.25 A
= -0.25 A
= -0.25 A
j
= 25°C, unless otherwise specified
3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
-
-
-
-
-
-
-
0.06
Values
typ.
0.12
95
20
10
8
25
25
42
max.
-
130
30
15
12
40
33
55
18/02/1997
BSS 192
Unit
S
pF
ns