BSL307SP Infineon Technologies, BSL307SP Datasheet - Page 6

• Manufacturer Part Number: BSL307SP
• Description: MOSFET P-CH 30V 5.5A 6-TSOP
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSL307SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 805pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Package: TSOP-6
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 43.0 mOhm
• Rds (on) (max) (@4.5v): 74.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSL307SPINTR

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
10
pF
10
10
60
50
45
40
35
30
25
20
-60
4
3
2
0
DS
= f(T j )
)
D
-20
5
GS
= -5.5 A, V
=0, f=1 MHz
10
20
Ciss
Coss
Crss
98%
typ.
15
GS
60
= -10 V
20
100
V
°C
T
- V
Rev 1.2
j
DS
160
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
A
V
-1
2
1
-60
2
1
0
0
= f (T j )
SD
BSL307SP
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
2%
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
typ.
98%
-1.6
60
-2
BSL307SP
100
2007-02-23
-2.4
°C
V
V
T
SD
j
160
-3