BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 6

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

Rev.2.0
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10
10
Ω
11
9
8
7
6
5
4
3
2
1
0
-60
3
2
1
0
0
BSP 317 P
DS
= f (T
)
4
-20
D
GS
j
)
8
= -0.43 A, V
=0, f=1 MHz, T
20
12
98%
16
typ
60
20
GS
100
24
= -10 V
j
= 25°C
C
C
C
28
oss
rss
iss
°C
V
T
-V
j
DS
180
36
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
-60
1
0
0
= f (T j )
SD
BSP 317 P
)
-0.4
-20
GS
-0.8
= V
20
DS
-1.2
T
T
T
T
98%
typ.
2%
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
-1.6
60
-2
100
BSP317P
2008-03-27
-2.4
°C
T
V
V
j
SD
160
-3