SPB21N10 Infineon Technologies, SPB21N10 Datasheet - Page 2

• Manufacturer Part Number: SPB21N10
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SPB21N10INTR

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
= 44 µA
=100V, V
=100V, V
=0V, I
=20V, V
=10V, I
2
cooling area
D
D
=1mA
DS
=15.0A
GS
GS
=0V
=0V, T
=0V, T
F)
j
j
=25°C
=125°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
100
2.1
-
-
-
-
-
-
-
-
Values
Values
0.01
typ.
typ.
65
3
1
1
-
-
-
-
-
max.
max.
100
100
1.7
80
62
62
40
2005-02-14
4
1
-
SPB21N10
Unit
V
µA
nA
m
Unit
K/W