SPB80N03S2L-05 Infineon Technologies, SPB80N03S2L-05 Datasheet - Page 5

• Manufacturer Part Number: SPB80N03S2L-05
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N03S2L-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 110µA
• Gate Charge (qg) @ Vgs: 89.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 25V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SPB80N03S2L05INTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
250
200
175
150
125
100
A
A
80
60
40
20
75
50
25
0
0
0
0
DS
SPP80N03S2L-05
GS
P
0.5
tot
); T
); V
= 167W
i
h
p
p
g
1
f
= 80 µs
= 80 µs
1
j
=25°C
DS
e
1.5
≥ 2 x I
2
2
D
2.5
3
x R
3
DS(on)max
4
3.5
c
a
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
GS
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
140
100
S
16
12
10
80
60
40
20
SPP80N03S2L-05,SPB80N03S2L-05
8
6
4
2
0
0
0
0
D
SPP80N03S2L-05
= f (I
V
); T
GS
3.5
c
25
[V] =
20
j
4.0
d
=25°C
D
fs
GS
50
)
4.5
e
40
75 100 125 150 175 200
c
5.0
f
g
5.5
60
6.0
h
SPI80N03S2L-05
10.0
80
i
100
2003-04-24
A
d
g
I
i
e
D
I
A
D
h
f
140
250