MTW32N20E ON Semiconductor, MTW32N20E Datasheet - Page 2

• Manufacturer Part Number: MTW32N20E
• Description: MOSFET N-CH 200V 32A TO-247
• Manufacturer: ON Semiconductor

Specifications of MTW32N20E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTW32N20EOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 1 & 2)
SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)
INTERNAL PACKAGE INDUCTANCE
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V
Temperature Coefficient (Positive)
(V
(V
(V
Temperature Coefficient (Negative)
(I
(I
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
D
D
GS
DS
DS
DS
= 32 Adc)
= 16 Adc, T
= 0 V, I
= 200 Vdc, V
= 200 Vdc, V
= V
GS
, I
D
D
= 250 mAdc)
J
= 250 mAdc)
= 125°C)
GS
GS
= 0)
= 0, T
GS
DS
J
GS
= 125°C)
= 10 Vdc)
= 15 Vdc, I
= ± 20 Vdc, V
Characteristic
GS
(T
(I
= 10 Vdc, I
S
(V
J
D
(I
= 32 Adc, V
= 25°C unless otherwise noted)
DS
S
= 16 Adc)
(V
(V
= 16 Adc, V
DS
V
= 25 Vdc, V
DD
DS
GS
(I
= 0)
S
= 100 Vdc, I
= 160 Vdc, I
D
= 10 Vdc, R
= 32 Adc, V
V
= 16 Adc)
GS
GS
http://onsemi.com
= 10 Vdc)
GS
= 0, dI
GS
= 0, T
= 0, f = 1.0 MHz)
D
D
G
GS
S
= 32 Adc,
= 32 Adc,
= 6.2 W)
/dt = 100 A/ms)
2
J
= 0)
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
d(on)
g
d(off)
DSS
GSS
Q
Q
Q
Q
L
L
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
r
D
S
f
T
1
2
3
Min
200
2.0
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.064
3600
2.94
Typ
247
130
690
120
280
195
8.0
1.1
0.9
5.0
25
75
91
85
12
40
30
85
13
−
−
−
−
−
−
−
−
0.075
1000
5000
1000
Max
250
100
250
240
150
182
120
4.0
3.0
2.7
2.0
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W