MTW32N20E ON Semiconductor, MTW32N20E Datasheet - Page 5

• Manufacturer Part Number: MTW32N20E
• Description: MOSFET N-CH 200V 32A TO-247
• Manufacturer: ON Semiconductor

Specifications of MTW32N20E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTW32N20EOS

maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define the
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
20
16
12
8
4
0
) nor rated voltage (V
0
Figure 8. Gate−To−Source and Drain−To−Source
Q
1
10
J(MAX)
Q
3
V
20
DS
r
Voltage versus Total Charge
,t
− T
f
) do not exceed 10ms. In addition the total
30
C
Q
Q
)/(R
2
T
, TOTAL CHARGE (nC)
40
Q
qJC
T
).
50
T
I
V
DSS
D
J
DS
= 32 A
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
= 25°C
= 160 V
30
20
10
) is exceeded and the
0
60
Figure 10. Diode Forward Voltage versus Current
0
T
V
V
70
C
J
GS
GS
) of 25°C. Peak
= 25°C
= 0 V
0.2
80
V
SAFE OPERATING AREA
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
90
http://onsemi.com
0.4
100
200
180
160
140
120
100
80
60
40
20
0
5
0.6
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
200
100
Although many E−FETs can withstand the stress of
20
10
2
1
1
0.8
T
I
V
V
D
J
DD
GS
= 32 A
DM
= 25°C
= 100 V
= 10 V
2
Figure 9. Resistive Switching Time
), the energy rating is specified at rated
Variation versus Gate Resistance
1
R
G
, GATE RESISTANCE (OHMS)
D
), in accordance with industry
10
20
D
can safely be
t
t
d(off)
d(on)
100
t
t
r
f