NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 3

• Manufacturer Part Number: NTR2101PT1G
• Description: MOSFET P-CH 8V 3.7A SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTR2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1173pF @ 4V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTR2101PT1GOSTR

0.25
0.15
0.05
0.2
0.1
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
8
6
4
2
0
0
0
−50
0
I
V
D
GS
Figure 5. On−Resistance Variation with
−25
= −3.7 A
Figure 1. On−Region Characteristics
−V
−V
= −4.5 V
1
Figure 3. On−Resistance versus
DS
GS
T
V
1
V
J
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Gate−to−Source Voltage
GS
0
= −2.2 V
= −2.4 V
= −2.6 V to −6.0 V
2
Temperature
25
2
3
50
V
V
V
V
GS
GS
GS
GS
3
75
= −2.0 V
= −1.8 V
= −1.4 V
= −1.2 V
4
TYPICAL CHARACTERISTICS
I
T
D
100
J
T
= −3.7 A
J
= 25°C
4
= 25°C
5
http://onsemi.com
125
150
5
6
3
100000
10000
1000
0.08
0.06
0.04
0.02
100
10
8
6
4
2
0
0
0
2
0
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
V
DS
−V
T
GS
GS
J
DS
≥ −10 V
= 25°C
−V
= 0 V
Figure 2. Transfer Characteristics
= −4.5 V
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
2
T
T
−I
J
J
= 150°C
D
T
= 100°C
and Gate Voltage
, DRAIN CURRENT (A)
J
4
T
= 150°C
T
versus Voltage
T
J
J
J
= −55°C
= 25°C
= 150°C
T
J
= −55°C
2
5
4
6
3
6
7
4
8
8