NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 6

MOSFET P-CH 8V 3.7A SOT-23

NTR2101PT1G

Manufacturer Part Number
NTR2101PT1G
Description
MOSFET P-CH 8V 3.7A SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheets

Specifications of NTR2101PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
8V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1173pF @ 4V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTR2101PT1GOSTR

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Quantity:
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PUBLICATION ORDERING INFORMATION
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
VIEW C
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
USA/Canada
Phone: 421 33 790 2910
Phone: 81−3−5773−3850
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
q
0.25
c
6
SCALE 10:1
0.037
NOTES:
0.95
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
STYLE 21:
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
PROTRUSIONS, OR GATE BURRS.
DIM
A1
H
PIN 1. GATE
0.079
L1
A
D
E
q
b
c
e
L
2.0
E
inches
2. SOURCE
3. DRAIN
mm
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
0
°
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
1.11
10
°
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
NTR2101P/D
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX
10
°

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