NIF9N05CLT1 ON Semiconductor, NIF9N05CLT1 Datasheet - Page 3
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NIF9N05CLT1
Manufacturer Part Number
NIF9N05CLT1
Description
MOSFET N-CH 52V 2.6A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NIF9N05CLT3G.pdf
(6 pages)
Specifications of NIF9N05CLT1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
52V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
250pF @ 35V
Power - Max
1.69W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NIF9N05CLT1OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NIF9N05CLT1
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
950
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
30 000
MOSFET ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
ESD CHARACTERISTICS
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Electro−Static Discharge Capability
Characteristic
I
S
I
S
= 2.6 A, V
Human Body Model (HBM)
dI
= 2.6 A, V
V
V
V
V
V
I
D
I
GS
GS
I
GS
GS
I
s
GS
Machine Model (MM)
D
D
S
/dt = 100 A/ms (Note 3)
I
I
= 2.6 A, R
D
D
= 2.6 A, R
= 1.0 A, R
= 1.5 A, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 10 V, V
(T
= 2.6 A (Note 3)
= 1.5 A (Note 3)
J
GS
= 25°C unless otherwise noted)
http://onsemi.com
GS
= 0 V, T
NIF9N05CL
= 0 V (Note 3)
D
D
GS
D
DD
DD
DD
DS
DS
= 15.4 W
= 5.8 W
= 40 W
= 0 V,
= 15 V,
= 40 V,
= 15 V,
= 40 V,
= 40 V,
J
3
= 125°C
Symbol
t
t
t
t
t
t
Q
ESD
V
d(on)
d(on)
d(on)
d(off)
d(off)
d(off)
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
t
t
t
SD
rr
RR
a
b
r
f
r
f
r
f
T
1
2
T
1
2
5000
Min
500
1418
1120
1165
1273
1540
1000
0.81
0.66
275
780
242
906
107
290
730
200
530
Typ
4.5
0.9
2.6
3.9
1.0
1.7
6.3
2400
1320
1900
Max
465
7.0
1.5
Unit
nC
nC
mC
ns
ns
ns
ns
V
V