NIF9N05CLT1 ON Semiconductor, NIF9N05CLT1 Datasheet - Page 4
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NIF9N05CLT1
Manufacturer Part Number
NIF9N05CLT1
Description
MOSFET N-CH 52V 2.6A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NIF9N05CLT3G.pdf
(6 pages)
Specifications of NIF9N05CLT1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
52V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
250pF @ 35V
Power - Max
1.69W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NIF9N05CLT1OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NIF9N05CLT1
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
950
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
30 000
1.7
1.3
0.9
0.7
0.5
1.9
1.5
1.1
0.4
0.3
0.2
0.1
6
4
2
0
0
−50
0
2
I
V
D
Figure 3. On−Resistance vs. Gate−to−Source
GS
1
V
= 2.6 A
−25
DS
Figure 1. On−Region Characteristics
V
Figure 5. On−Resistance Variation with
= 12 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
T
V
J
, JUNCTION TEMPERATURE (°C)
GS
0
3
= 10, 5 & 4 V
25
4
Temperature
6
Voltage
5
50
6
8
75
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
2.6 V
2.4 V
3 V
TYPICAL PERFORMANCE CURVES
7
100
8
T
10
I
T
J
D
J
= 25°C
= 2 A
125
= 25°C
9
http://onsemi.com
NIF9N05CL
10
150
12
4
1000000
100000
10000
1000
0.12
0.24
0.16
0.08
0.2
6
5
4
3
2
1
0
1
30
1
Figure 4. On−Resistance vs. Drain Current and
V
DS
Figure 6. Drain−to−Source Leakage Current
T
T
V
J
V
≥ 10 V
J
GS
= 25°C
DS
T
= 25°C
J
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
= 150°C
35
T
2
J
I
= −55°C
D,
DRAIN CURRENT (AMPS)
T
J
Gate Voltage
3
40
= 100°C
3
vs. Voltage
V
V
GS
T
GS
J
= 100°C
= 10 V
= 4 V
4
45
4
5
50
5
6
55
6