NTMSD6N303R2G ON Semiconductor, NTMSD6N303R2G Datasheet - Page 10
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NTMSD6N303R2G
Manufacturer Part Number
NTMSD6N303R2G
Description
MOSFET N-CH 30V 6A 8-SOIC
Manufacturer
ON Semiconductor
Series
FETKY™r
Datasheet
1.NTMSD6N303R2.pdf
(11 pages)
Specifications of NTMSD6N303R2G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
32 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 24V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTMSD6N303R2GOS
• Applicable in battery packs which require a high current level.
• During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
• During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
• Under normal operation, both transistors are on.
Li−Ion
BATTERY
CELLS
Li−Ion BATTERY PACK APPLICATIONS
TYPICAL APPLICATIONS
SCHOTTKY
DISCHARGE
Q1
http://onsemi.com
Battery Pack
SMART IC
10
SCHOTTKY
CHARGE
Q2
PACK +
PACK −