NTMSD6N303R2G ON Semiconductor, NTMSD6N303R2G Datasheet - Page 7

• Manufacturer Part Number: NTMSD6N303R2G
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMSD6N303R2GOS

0.000001
0.00001
0.0001
0.001
1000
0.01
100
0.1
10
0
0
Figure 17. Typical Reverse Current
5.0
5.0
Figure 19. Typical Capacitance
V
V
R
, REVERSE VOLTAGE (VOLTS)
R
, REVERSE VOLTAGE (VOLTS)
10
10
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
T
J
85°C
= 125°C
25°C
15
15
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
I
pk
20
20
/I
o
Figure 21. Forward Power Dissipation
= 20
I
I
pk
1.0
O
, AVERAGE FORWARD CURRENT (AMPS)
/I
o
25
25
= 10
http://onsemi.com
I
pk
/I
o
= 5.0
2.0
30
30
I
7
pk
0.000001
/I
0.00001
o
0.0001
= p
0.001
0.01
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
3.0
0
0
0
SQUARE
WAVE
SQUARE WAVE
20
I
I
I
I
pk
pk
pk
Figure 18. Maximum Reverse Current
pk
5.0
4.0
/I
/I
/I
/I
dc
o
o
o
o
= 5.0
= 10
= 20
= p
40
Figure 20. Current Derating
T
V
A
R
, AMBIENT TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
dc
10
5.0
60
T
J
= 125°C
25°C
15
80
100
20
120
FREQ = 20 kHz
25
140
160
30