NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet
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NTD110N02RT4G
Specifications of NTD110N02RT4G
NTD110N02RT4GOS
NTD110N02RT4GOSTR
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NTD110N02RT4G Summary of contents
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NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low R to Minimize Conduction Loss DS(on) • Low C to Minimize Driver Loss iss • Low Gate Charge • Optimized ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 250 mA Positive Temperature Coefficient Zero Gate Voltage Drain Current ( ...
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150 4 125 4 100 3 3 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...
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4000 iss 3000 2000 C rss 1000 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 V = ...
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... Single Pulse 0.01 0.00001 0.0001 ORDERING INFORMATION Device NTD110N02RG NTD110N02R−001G NTD110N02RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.001 0.01 t, TIME (s) Figure 12. Thermal Response Package DPAK (Pb− ...
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... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...