NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 2

• Manufacturer Part Number: NTD110N02RT4G
• Description: MOSFET N-CH 24V 12.5A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD110N02RT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3440pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0041 Ohms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 2.88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD110N02RT4GOS; NTD110N02RT4GOS; NTD110N02RT4GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Negative Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
GS
= 20 V, V
= 20 V, V
= V
= 0 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
GS
, I
D
D
D
D
D
D
= 250 mA)
GS
GS
= 250 mA)
= 110 A)
= 20 A)
= 55 A)
= 20 A)
= 0 V)
= 0 V, T
J
DS
= 125°C)
GS
Characteristic
= 10 V, I
= ±20 V, V
(V
(I
DS
S
(I
(T
D
S
= 20 A, V
dI
= 20 V, V
(V
J
= 15 A) (Note 3)
= 20 A, V
(V
S
I
= 25°C unless otherwise noted)
DS
(I
(I
GS
D
V
/dt = 100 A/ms) (Note 3)
GS
S
S
DS
= 40 A, R
= 0 V)
= 55 A, V
= 30 A, V
= 10 V, V
= 4.5 V, I
= 10 V) (Note 3)
GS
GS
GS
= 0 V, T
= 0 V, f = 1.0 MHz)
= 0 V) (Note 3)
G
http://onsemi.com
GS
GS
DD
D
= 3.0 W)
= 40 A,
= 0 V)
= 0 V,
= 10 V,
J
= 125°C)
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
Q
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
t
t
t
FS
oss
t
t
SD
rss
GS
GD
iss
rr
a
b
r
f
rr
T
Min
1.0
24
0.048
2710
1105
23.6
0.82
0.99
0.65
36.5
Typ
450
1.5
5.0
4.1
5.5
3.9
5.5
5.1
28
15
44
39
27
21
30
25
11
11
±100
3440
1670
Max
640
1.5
2.0
4.6
6.2
1.2
10
22
80
40
40
28
mV/°C
mV/°C
Mhos
Unit
mW
nA
nC
mC
mA
pF
ns
ns
V
V
V