NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 2
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NTD110N02RT4G
Manufacturer Part Number
NTD110N02RT4G
Description
MOSFET N-CH 24V 12.5A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD110N02R-001.pdf
(7 pages)
Specifications of NTD110N02RT4G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
3440pF @ 20V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0041 Ohms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
2.88 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD110N02RT4GOS
NTD110N02RT4GOS
NTD110N02RT4GOSTR
NTD110N02RT4GOS
NTD110N02RT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD110N02RT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD110N02RT4G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Negative Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
GS
= 20 V, V
= 20 V, V
= V
= 0 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
GS
, I
D
D
D
D
D
D
= 250 mA)
GS
GS
= 250 mA)
= 110 A)
= 20 A)
= 55 A)
= 20 A)
= 0 V)
= 0 V, T
J
DS
= 125°C)
GS
Characteristic
= 10 V, I
= ±20 V, V
(V
(I
DS
S
(I
(T
D
S
= 20 A, V
dI
= 20 V, V
(V
J
= 15 A) (Note 3)
= 20 A, V
(V
S
I
= 25°C unless otherwise noted)
DS
(I
(I
GS
D
V
/dt = 100 A/ms) (Note 3)
GS
S
S
DS
= 40 A, R
= 0 V)
= 55 A, V
= 30 A, V
= 10 V, V
= 4.5 V, I
= 10 V) (Note 3)
GS
GS
GS
= 0 V, T
= 0 V, f = 1.0 MHz)
= 0 V) (Note 3)
G
http://onsemi.com
GS
GS
DD
D
= 3.0 W)
= 40 A,
= 0 V)
= 0 V,
= 10 V,
J
= 125°C)
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
Q
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
t
t
t
FS
oss
t
t
SD
rss
GS
GD
iss
rr
a
b
r
f
rr
T
Min
1.0
24
0.048
2710
1105
23.6
0.82
0.99
0.65
36.5
Typ
450
1.5
5.0
4.1
5.5
3.9
5.5
5.1
28
15
44
39
27
21
30
25
11
11
±100
3440
1670
Max
640
1.5
2.0
4.6
6.2
1.2
10
22
80
40
40
28
mV/°C
mV/°C
Mhos
Unit
mW
nA
nC
mC
mA
pF
ns
ns
V
V
V