BSP149 E6327 Infineon Technologies, BSP149 E6327 Datasheet - Page 4

• Manufacturer Part Number: BSP149 E6327
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP149 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP149E6327T; SP000011104

Rev. 1.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
1.5
0.5
10
10
DS
2
1
0
-1
-2
-3
1
0
A
10
0
); T
)
0
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
1
T
V
A
DS
80
[°C]
[V]
100 µs
10 ms
1 ms
DC
10
2
120
10 µs
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
10
10
A
0
2
1
0
); V
10
p
0
)
-4
0.5
0.05
0.02
0.2
GS
0.1
0.01
≥10 V
10
p
/T
-3
single pulse
40
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
120
10
2005-11-28
BSP149
1
160
10
2