BSS138N E8004 Infineon Technologies, BSS138N E8004 Datasheet - Page 3
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BSS138N E8004
Manufacturer Part Number
BSS138N E8004
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138N_L6327.pdf
(9 pages)
Specifications of BSS138N E8004
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138NE8004XT
SP000014563
SP000014563
Rev. 2.82
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=0.23 A, R
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=0 V, V
=30 V, V
=48 V, I
=0 to 10 V
=0 V, I
F
F
DS
=0.23 A,
=0.23 A,
D
GS
G
=0.23 A,
=25 V,
=6 Ω
=10 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.10
0.83
typ.
7.2
2.8
2.3
3.0
6.7
8.2
0.3
1.0
3.3
9.1
3.3
32
-
-
max.
12.3
0.14
0.23
0.92
14.5
9.5
3.8
3.5
4.5
0.4
1.4
1.2
41
10
5
-
BSS138N
Unit
pF
ns
nC
V
A
V
ns
nC
2009-02-11