BSS159N E6327 Infineon Technologies, BSS159N E6327 Datasheet - Page 3

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BSS159N E6327

Manufacturer Part Number
BSS159N E6327
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS159N E6327

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
3.5 Ohm @ 160mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
2.4V @ 26µA
Gate Charge (qg) @ Vgs
2.9nC @ 5V
Input Capacitance (ciss) @ Vds
44pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
N Channel
Continuous Drain Current Id
230mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
-2.8V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSS159NE6327XT
SP000014638
Rev. 1.32
Parameter
Dynamic characteristics
Input capacitance
Dynamic characteristics
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
GS
DD
GS
GS
R
=0.16 A, R
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=-10 V, V
=25 V,
=-3…7 V,
=40 V, I
=-3 to 5 V
=-3 V, I
F
F
=0.16 A,
D
=0.16 A,
G
=0.16 A,
DS
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.14
0.14
0.79
10.4
typ.
8.3
3.9
3.1
2.9
0.7
2.2
3.3
33
9
9
-
-
max.
0.21
0.20
0.81
5.9
4.7
4.4
1.1
2.9
1.2
4.1
44
11
13
13
13
-
BSS159N
Unit
pF
ns
nC
V
A
V
ns
nC
2006-12-11

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