BSS169 E6906 Infineon Technologies, BSS169 E6906 Datasheet - Page 6

• Manufacturer Part Number: BSS169 E6906
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS169 E6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 7V
• Input Capacitance (ciss) @ Vds: 68pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS169E6906XT; SP000055416

Rev. 1.3
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.01
0.1
10
24
20
16
12
GS
1
=f(T
8
4
0
-60
-3
); V
j
); I
DS
D
=3 V; T
-20
=0.05 A; V
-2.5
N
20
j
98 %
=25 °C
V
M
GS
GS
T
j
L
[V]
=0 V
60
-2
[°C]
typ
K
100
J
-1.5
140
50 µA
180
-1
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
-1.1
-1.5
-1.9
-2.3
-2.7
-3.1
-3.5
10
10
10
10
=f(T
DS
3
2
1
0
-60
); V
0
j
); V
D
GS
=-10 V; f =1 MHz
-20
DS
=3 V; I
20
10
D
=50 µA
V
T
j
DS
60
[°C]
98 %
[V]
typ
2 %
100
20
140
2007-02-07
BSS169
Ciss
Crss
Coss
180
30