BSS84P E6433 Infineon Technologies, BSS84P E6433 Datasheet - Page 5

• Manufacturer Part Number: BSS84P E6433
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P E6433

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84PE6433XT; SP000012323

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T j = 25 °C
D
D
= f ( V
Rev 2.4
= f (V
-0.32
-0.28
-0.24
-0.16
-0.12
-0.08
-0.04
0.25
0.15
0.05
-0.4
-0.2
0.4
0.3
0.2
0.1
A
A
0
0
0
0
BSS 84 P
DS
GS
P
-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
tot
)
); |V
= 0.36W
1
j
= 25 °C
DS |
2
l
k
2 x |I
j
3
i
D |
h
x R
4
DS(on)max
e
c
a
g
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
- V
V
DS
-10.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
GS
-5
6
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j = 25 °C
fs
DS(on)
= f(I
0.16
0.12
0.08
0.06
0.04
0.02
0.1
S
26
22
20
18
16
14
12
10
8
6
4
2
0
0
0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32
0
D
BSS 84 P
V
= f (I
-2.5
GS
)
a
a
[V] =
-3.0
b
0.04
D
GS
b
)
-3.5
c
; T j = 25 °C
-4.0
d
0.08
-4.5
e
c
-5.0
f
0.12
-5.5
d
g
-6.0
h
e
0.16
2006-12-05
-6.5
i
BSS 84 P
f
-7.0
j
A
g
I
-I
D
-8.0
A
D
l
k
h
j
k
-0.38
i
-10.0
0.22
l