BSS87 E6433 Infineon Technologies, BSS87 E6433 Datasheet - Page 4

• Manufacturer Part Number: BSS87 E6433
• Description: MOSFET N-CH 240V 260MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS87 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 97pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS87E6433T; SP000082233

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
-1
-2
-3
0
1
0
10
0
BSS87
BSS87
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
100
10
DC
2
120
t p = 65.0µs
100 µs
1 ms
10 ms
°C
V
T
V
Rev. 1.41
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.28
0.24
0.22
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
10
10
10
10
0.2
0.1
A
= f (t
-1
-2
0
3
2
1
0
10
0
BSS87
BSS87
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³ 10 V
-3
p
10
/T
60
-2
10
80
-1
10
100
0
10
2010-01-27
120
1
10
D = 0.50
2
BSS87
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4