BUZ32 H3045A Infineon Technologies, BUZ32 H3045A Datasheet - Page 3

• Manufacturer Part Number: BUZ32 H3045A
• Description: MOSFET N-CH 200V 9.5A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32 H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: BUZ32 L3045A; BUZ32 L3045A; BUZ32H3045AIN; BUZ32L3045AIN; BUZ32L3045AIN; BUZ32L3045AXT; SP000102174; SP000736086

Electrical Characteristics, at T
Rev. 2.3
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
≥
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 50
= 50
= 50
= 50
2
*
I
D *
Ω
Ω
Ω
Ω
DS
DS
DS
R
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 3 A
= 3 A
= 3 A
= 3 A
= 6 A
j
= 25˚C, unless otherwise specified
t
Symbol
g
C
C
C
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
Page 3
-
-
-
-
-
min.
-
-
3
Values
typ.
4.6
400
85
45
10
40
55
30
max.
-
60
75
40
530
130
70
15
2009-04-08
BUZ 32
ns
Unit
S
pF