IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet - Page 5

• Manufacturer Part Number: IPD09N03LB G
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LBGXT; SP000016412

Rev. 1.55
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
10 V
j
GS
DS
|>2|I
1
D
|R
1
DS(on)max
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
4.5 V
4.1 V
2.8 V
4
3.5 V
3.8 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
20
18
16
14
12
10
70
60
50
40
30
20
10
D
=f(I
8
6
4
2
0
0
); T
0
0
D
3.5 V
j
); T
=25 °C
GS
10
j
=25 °C
IPS09N03LB G IPU09N03LB G
20
IPD09N03LB G IPF09N03LB G
3.8 V
20
40
I
I
4.1 V
D
D
30
[A]
[A]
60
40
4.5 V
80
50
10 V
2008-04-14
100
60