SPB80N03S2L-03 G Infineon Technologies, SPB80N03S2L-03 G Datasheet
SPB80N03S2L-03 G
Specifications of SPB80N03S2L-03 G
SPB80N03S2L03GXT
Related parts for SPB80N03S2L-03 G
SPB80N03S2L-03 G Summary of contents
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... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =24V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N03S2L-03,SPB80N03S2L-03 P- TO262 -3-1 DS(on) Ordering Code Q67040-S4248 Q67040-S4259 Q67042-S4078 Symbol puls E AS ...
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... ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4 Diagrams are related to straight lead versions SPP80N03S2L-03,SPB80N03S2L-03 Symbol R thJC R ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N03S2L-03,SPB80N03S2L-03 Symbol Conditions ≥2 DS(on)max I ...
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... Power dissipation tot C ≥ parameter SPP80N03S2L-03 320 W 240 200 160 120 100 120 140 160 3 Safe operating area parameter : ° SPP80N03S2L- SPP80N03S2L-03,SPB80N03S2L-03 2 Drain current parameter: V SPP80N03S2L- °C 190 Max. transient thermal impedance thJC parameter : K 36.0µ 100 µ Page 4 SPI80N03S2L-03 ) ≥ ...
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... Typ. transfer characteristics ≥ parameter µs p 320 A 240 200 160 120 0.5 1 1.5 2 2.5 SPP80N03S2L-03,SPB80N03S2L-03 6 Typ. drain-source on resistance R DS(on) parameter Ω [V] a 2 3.0 d 3.3 e 3.5 f 3 4 Typ. forward transconductance g = f(I DS(on)max ...
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... Typ. gate threshold voltage V GS(th parameter 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss oss 10 rss Page 6 SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L- 1.25 mA 250 µ -60 - 100 ) µs p SPP80N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 2003-05-09 ° ...
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... Drain-source breakdown voltage (BR)DSS j parameter SPP80N03S2L- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 ) Gate = 80 A pulsed D SPP80N03S2L-03 0 max 0 max 120 160 2003-05-09 200 260 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-03, BSPB80N03S2L-03 and BSPI80N03S2L-03, for simplicity the device is referred to by the term SPP80N03S2L-03, SPB80N03S2L-03 and SPI80N03S2L-03 throughout this documentation SPP80N03S2L-03,SPB80N03S2L-03 Page 8 ...