SPB80N03S2L-06 G Infineon Technologies, SPB80N03S2L-06 G Datasheet - Page 5

• Manufacturer Part Number: SPB80N03S2L-06 G
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N03S2L-06 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000200145; SPB80N03S2L06GXT

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N03S2L-06
GS
P
0.5
0.5
tot
); T
); V
= 150W
p
p
e
f
= 80 µs
= 80 µs
1
1
j
=25°C
DS
d
1.5
1.5
≥ 2 x I
2
2
D
2.5
2.5
x R
3
DS(on)max
3
3.5
3.5
c
a
b
V GS [V]
4
4
a
b
c
d
e
f
V
V
V
V
DS
GS
10.0
3.5
4.0
4.5
5.0
6.0
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
mΩ
= f(I
100
120
100
S
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
SPP80N03S2L-06,SPB80N03S2L-06
0
0
0
0
D
= f (I
); T
20
a
j
=25°C
20
D
fs
GS
40
)
60
40
80 100 120 140 160
b
60
SPI80N03S2L-06
80
2003-05-09
c
A
V
a= 3.5
b= 4
c= 4.5
d= 5
e= 6
f= 10
GS
I
A
D
I
[V]=
d
D
e
f
120
200