SPB80N04S2-04 Infineon Technologies, SPB80N04S2-04 Datasheet - Page 7
![MOSFET N-CH 40V 80A D2PAK](/photos/5/61/56121/448-d2pak_sml.jpg)
SPB80N04S2-04
Manufacturer Part Number
SPB80N04S2-04
Description
MOSFET N-CH 40V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N04S2-04.pdf
(8 pages)
Specifications of SPB80N04S2-04
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6980pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000016353
SPB80N04S204T
SPB80N04S204T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB80N04S2-04
Manufacturer:
infineon
Quantity:
1 641
Company:
Part Number:
SPB80N04S2-04
Manufacturer:
INFINEON
Quantity:
11 368
Part Number:
SPB80N04S2-04
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
850
700
600
500
400
300
200
100
V
= f (T
48
46
45
44
43
42
41
40
39
38
37
36
D
-60
0
25
SPP80N04S2-04
= 80 A, V
= f (T
j
)
45
-20
D
=10 mA
j
65
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
20 40 60 80 100 120 140 160 180
Gate
D
= 80 A pulsed
)
0,2
V
DS max
SPI80N04S2-04
0,8 V
2004-05-24
DS max
nC
Q
Gate
210