SPB80N06S2-08 Infineon Technologies, SPB80N06S2-08 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2-08
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 3800pF @ 25V
• Power - Max: 215W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016356; SPB80N06S208T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2-08
GS
P
0.5
tot
); T
); V
= 215W
1
p
p
= 80 µs
= 80 µs
1
j
=25°C
DS
i
1.5
2
≥ 2 x I
2
3
D
2.5
x R
4
3
DS(on)max
3.5
5
g
e
c
a
h
f
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
GS
10.0
4.5
4.8
5.0
5.2
5.5
5.8
6.0
6.5
7
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
S
26
22
20
18
16
14
12
10
80
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
= f (I
V
); T
GS
5.2
d
d
[V] =
20
j
5.5
e
=25°C
D
fs
20
GS
)
5.8
f
e
40
g
6.0
40
f
6.5
h
60
10.0
i
60
g
SPI80N06S2-08
80
2003-05-09
80
100
h
A
A
I
D
I
i
D
130
110