SPB80N06S2-09 Infineon Technologies, SPB80N06S2-09 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2-09
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2-09

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 125µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3140pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013581; SPB80N06S209T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2-09
GS
P
tot
); T
); V
= 190W
1
p
p
1
= 80 µs
= 80 µs
j
=25°C
DS
l
2
≥ 2 x I
2
3
D
x R
3
4
DS(on)max
5
k
i
g
e
c
a
4
j
h
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
V
DS
GS
10.0
4.5
4.8
5.0
5.3
5.5
5.8
6.0
6.3
6.5
6.8
7.0
5.5
7
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
Ω
S
30
24
22
20
18
16
14
12
10
75
45
30
15
8
6
4
2
0
0
0
0
D
SPP80N06S2-09
= f (I
V
); T
GS
5.3
d
10
20
[V] =
d
5.5
j
e
=25°C
D
fs
GS
)
20
5.8
40
f
e
g
6.0
30
60
f
6.3
h
40
g
80
6.5
SPB80N06S2-09
i
SPP80N06S2-09
50
h
6.8
100 120
j
i
7.0
k
60
2003-05-09
10.0
l
70
j
140
k
I
A
D
I
l
A
D
170
90