SPB80N06S2L-05 Infineon Technologies, SPB80N06S2L-05 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2L-05
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 7530pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016352; SPB80N06S2L05T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-05
GS
P
0.5
tot
); T
0.5
h
); V
g
= 300W
p
p
= 80 µs
= 80 µs
1
j
=25°C
DS
1
f
1.5
≥ 2 x I
1.5
2
D
2.5
2
x R
3
DS(on)max
2.5
3.5
e
c
a
3
b
d
V GS [V]
4
a
b
c
d
e
f
g
h
V
V
V
V
DS
GS
10.0
2.8
3.0
3.3
3.5
3.8
4.0
4.5
4
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
200
160
140
120
100
S
16
12
10
80
60
40
20
SPP80N06S2L-05,SPB80N06S2L-05
8
6
4
2
0
0
0
0
D
SPP80N06S2L-05
= f (I
V
); T
GS
3.5
d
20
[V] =
20
j
3.8
e
=25°C
D
fs
GS
40
)
4.0
f
40
60
g
4.5
80 100 120 140 160
10.0
h
60
d
SPI80N06S2L-05
80
100
2003-05-09
A
e
h
I
D
I
A
f
D
g
140
200