SPB80N06S2L-06 Infineon Technologies, SPB80N06S2L-06 Datasheet - Page 6

• Manufacturer Part Number: SPB80N06S2L-06
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 180µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5050pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013577; SPB80N06S2L06T

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
Ω
pF
10
10
10
21
18
16
14
12
10
8
6
4
2
0
-60
4
3
2
0
SPP80N06S2L-06
= f (T
DS
)
-20
D
j
5
GS
)
= 69 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
C
C
C
= 10 V
iss
oss
rss
100
20
140 °C
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.4
1.6
1.2
0.8
0.4
V
A
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N06S2L-06
)
0.4
-20
GS
0.8
p
= V
= 80 µs
180 µA
20
DS
1.2
T
T
T
T
j
j
j
j
SPB80N06S2L-06
SPP80N06S2L-06
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
0.9 mA
100
2
2003-05-09
2.4
°C
V
V
T
j
SD
180
3